World's first vertically stacked gate-all-around Si nanowire CMOS transistors

At this week's IEEE IEDM conference, world-leading research and innovation hub for nano-electronics and digital technology, imec, reported for the first time the CMOS integration of vertically stacked gate-all-around (GAA) silicon nanowire MOSFETs. Key in the integration scheme is a dual-work-function metal gate enabling matched threshold voltages for the n- and p-type devices. Also, the impact of the new architecture on intrinsic ESD performance was studied, and an ESD protection diode is propo