Researchers demonstrate first laser arrays monolithically grown on 300mm silicon wafers

Imec and Ghent University present, for the first time, arrays of indium phosphide lasers monolithically integrated on 300mm silicon substrates in a CMOS pilot line. This breakthrough achievement, published in Nature Photonics, provides a path toward high-volume manufacturing of cost-effective photonic integrated circuits (PICs) with monolithically integrated laser sources. Such laser-powered PICs will revolutionize data transfer between future logic and memory chips.