High-speed transistor channel developed using a core-shell nanowire structure

A research group led by Naoki Fukata, International Center for Materials Nanoarchitectonics, National Institute for Materials Science (NIMS), and a research group at Georgia Institute of Technology jointly developed a double-layered nanowire, consisting of a germanium (Ge) core and a silicon (Si) shell, which is a promising material for high-speed transistor channels. In addition, the groups verified that the Si layer, which was doped with impurities, and the Ge layer, which transports carriers,