Samsung first to 3nm

Today, Samsung announced that it has started initial production of its 3nm process node applying Gate-All-Around (GAA) transistor architecture. “Multi-Bridge-Channel FET (MBCFET™), Samsung’s GAA technology defies the performance limitations of FinFET, improving power efficiency by reducing the supply voltage level, while also enhancing performance by increasing drive current capability,” says a statement from Samsung. Samsung ...
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