Rohm cuts inductance in SiC power module

Rohm cuts inductance in SiC power module
Rohm has introduced a 1,200V 300A all-silicon carbide half-bridge power module, with reduced inductance compared with its first devices – claimed stray inductance is 13nH. Rohm began mass production of all-SiC power modules in March 2012 – the 120A and 180A 1,200V products continue are selling into industrial and power sectors. “Although further increases in current ...
steve bush