GaN OBC design reduces BOM and increases power density over SiC

GaN Systems  has  a GaN-based 11kW/800V On-Board Charger (OBC) reference design that claims to deliver 36% higher power density and a BOM up to 15% cheaper than SiC transistors. Using GaN transistors in an 800V OBC is an innovation that gives this 11kW/800V design its edge. The OBC combines a three-level flying capacitor topology for ...
The post GaN OBC design reduces BOM and increases power density over SiC appeared first on Electronics Weekly.